D ec 1 99 8 Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers
نویسندگان
چکیده
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density n-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the 0 − 5K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.
منابع مشابه
Comment on "Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers"
We calculate within the Boltzmann equation approach the charged impurity-scattering-limited lowtemperature electronic resistivity of low-density n-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the 0 5 K temperature range, with the low-density, low-temperature mobility showing a strikingly strong nonmonotonic tem...
متن کاملInterface charged impurity scattering in semiconductor MOSFETs and MODFETs : temperature dependent resistivity and 2 D “ metallic ” behavior
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.
متن کاملConsistent picture of electronic Raman scattering and infrared conductivity in the cuprates
Impurity effects in the cuprates have played a major role in clarifying the nature of unconventional superconductivity. Via the change in the density of states ~DOS! near the Fermi level, crossover behavior of low-temperature transport and thermodynamics quantities could be explored as a testing ground for unconventional pairing. Examples include the T to T crossover in the low-temperature magn...
متن کاملExperimental investigation of electron transport properties of gallium nitride nanowires
We report transport properties of gallium nitride GaN nanowires grown using direct reaction of ammonia and gallium vapor. Reliable devices, such as four-terminal resistivity measuring structures and field-effect transistors, were realized by dielectrophoretically aligning the nanowires on an oxidized silicon substrate and subsequently applying standard microfabrication techniques. Room-temperat...
متن کاملEffect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
We studied the effect of the depletion charge in the polysilicon gate on electron mobility in ultrathin oxide MOSFETs. An improved theory for remote-charge-scattering-limited mobility in silicon inversion layers is developed. The model takes into account the effects of image charges, screening, inversion layer quantization, the contribution of different subbands, oxide thickness, the actual dis...
متن کامل